Chen, Hua; Zhang, Hong-Zhou; Chen, Ying; Liu, Yun; Li, Chi; Williams, James
Boron nitride (BN) nanotubes are wide-band-gap semiconductors, which make them an ideal host material for doping with rare-earth ions. Special luminescent properties are expected in doped BN nanotubes for applications in nanosized lighting and display devices. Europium (Eu) doped BN nanotubes have been synthesized by using a ball-milling and annealing method. A broad visible light emission, excited by electrons, from the Eu2+ doped BN nanotubes has been realized. The Eu element content in the...[Show more]
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