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Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

Ashrafi, Abm (Almamun)


Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Surface Science
DOI: 10.1016/j.susc.2010.08.002


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