Skip navigation
Skip navigation

Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices

Gao, Qiang; Buda, Manuela; Jagadish, Chennupati; Tan, Hark Hoe


An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the...[Show more]

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
Source: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2004.1577479


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator