Nanoindentation of Si Nanocrystals in SiO2
Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN...[Show more]
|Collections||ANU Research Publications|
|Source:||2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
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