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Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel; Cuevas, Andres

Description

Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1μ.cm to 100.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
URI: http://hdl.handle.net/1885/54155
Source: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
DOI: 10.1109/PVSC.2014.6925391

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