Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel; Cuevas, Andres
Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1μ.cm to 100.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for...[Show more]
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