Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon
Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1μ.cm to 100.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for...[Show more]
|Collections||ANU Research Publications|
|Source:||2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014|
|01_Zheng_Parameterization_of_carrier_2014.pdf||851.02 kB||Adobe PDF||Request a copy|
|02_Zheng_Parameterization_of_carrier_2014.pdf||142.99 kB||Adobe PDF||Request a copy|
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