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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Mokkapati, Sudha; Lever McGowan, Penelope; Jagadish, Chennupati; McBean, K. E.; Phillips, Matthew R.; Tan, Hark Hoe


We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
Source: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2004.1577543


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