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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Mokkapati, Sudha; Lever McGowan, Penelope; Tan, Hoe Hark; Jagadish, Chennupati; McBean, K E; Phillips, Matthew R

Description

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a

CollectionsANU Research Publications
Date published: 2005
Type: Conference paper
URI: http://hdl.handle.net/1885/54013
Source: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2004.1577543

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