Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a
|Collections||ANU Research Publications|
|Source:||2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.