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Recombination activity of manganese in p- and n-type crystalline silicon

MacDonald, Daniel; Rosenits, Philipp; Deenapanray, Prakash


Silicon wafers implanted with low doses of manganese were annealed at 900 °C to distribute the Mn throughout the sample volume, and were subjected to carrier lifetime measurements. The Mn centres thus introduced were found to decrease the recombination l

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/22/2/028


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