Skip navigation
Skip navigation

Influence of the NH 3 :SiH 4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiN x

Wan, Yimao; Yan, Di; Cuevas, Andres; McIntosh, Keith


We investigate the surface passivation of phosphorus (n+) diffused crystalline silicon that is either planar or textured and passivated with amorphous silicon nitride (SiNx). A low and relatively constant saturation current density J0 is attained on the n+-diffused planar surfaces over a wide range of refractive index (n = 1.9-2.9 at 632 nm), and a wide range of sheet resistance (39-320 Ω/□). The results demonstrate that the trade-off between the optical transmission and surface recombination...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
Source: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
DOI: 10.1109/PVSC.2014.6925644


File Description SizeFormat Image
01_Wan_Influence_of_the_NH_3_:SiH_4__2014.pdf864.27 kBAdobe PDF    Request a copy
02_Wan_Influence_of_the_NH_3_:SiH_4__2014.pdf118.14 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator