Influence of the NH 3 :SiH 4 ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiN x
We investigate the surface passivation of phosphorus (n+) diffused crystalline silicon that is either planar or textured and passivated with amorphous silicon nitride (SiNx). A low and relatively constant saturation current density J0 is attained on the n+-diffused planar surfaces over a wide range of refractive index (n = 1.9-2.9 at 632 nm), and a wide range of sheet resistance (39-320 Ω/□). The results demonstrate that the trade-off between the optical transmission and surface recombination...[Show more]
|Collections||ANU Research Publications|
|Source:||2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014|
|01_Wan_Influence_of_the_NH_3_:SiH_4__2014.pdf||864.27 kB||Adobe PDF||Request a copy|
|02_Wan_Influence_of_the_NH_3_:SiH_4__2014.pdf||118.14 kB||Adobe PDF||Request a copy|
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