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High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

Mokkapati, Sudha; Jiang, Nian; Saxena, Dhruv; Jagadish, Chennupati; Tan, Hark Hoe

Description

III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
URI: http://hdl.handle.net/1885/53324
Source: Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014
DOI: 10.1109/SUM.2014.14

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