High quantum efficiency (Al) GaAs nanowires for optoelectronic devices
III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.
|Collections||ANU Research Publications|
|Source:||Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014|
|01_Mokkapati_High_quantum_efficiency_(Al)_2014.pdf||1.06 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.