Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells
We have investigated the quantum well interdiffusion of In xGa1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×1014 H/cm2 to 1×1016 H/cm 2 with subsequent annealing at 750° for 6
|Collections||ANU Research Publications|
|Source:||2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
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