Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition
The role of increasing GaAs thickness (0-3 nm) to improve the optical quality and tune the emission wavelength of InAs quantum dots (QDs) grown on GaInAsP buffer on (100) InP substrate by metalorganic chemical vapor deposition was studied. The growth of a very thin (0.3 nm-0.6 nm) GaAs interlayer between GaInAsP buffer and InAs QDs layer reduced the mean height and size fluctuation of InAs QDs by suppressing the As/P exchange reaction. As the GaAs interlayer thickness increased further, the...[Show more]
|Collections||ANU Research Publications|
|Source:||2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
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