Energy levels of self-trapped holes in amorphous SiO2: fictive temperature dependence
Fictive temperature (Tf) dependence of self-trapped holes (STHs) in low temperature UV-irradiated silica glasses was systematically investigated by the electron spin resonance (ESR) method. The decay of the ESR signals was found to be bleaching photon energy dependent and to follow the stretched exponential decay function at each bleaching wavelength. When the one-photon process is dominant during the photo-bleaching process, where the recombination of electrons excited from the valence band...[Show more]
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|Source:||Journal of Physics D: Applied Physics|
|01_Wang_Energy_levels_of_self-trapped_2009.pdf||373.26 kB||Adobe PDF||Request a copy|
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