Skip navigation
Skip navigation

Voids and Nanocavities in Silicon

Williams, James; Wong-Leung, Yin-Yin (Jennifer)


In silicon, defects that are normally observed following ion implantation and annealing are interstitial based, that is they arise from the agglomeration of interstitials that are produced during ion irradiation. Vacancies that are produced in equal numbe

CollectionsANU Research Publications
Date published: 2010
Type: Book chapter
DOI: 10.1007/978-3-540-88789-8_5


File Description SizeFormat Image
01_Williams_Voids_and_Nanocavities_in_2010.pdf7.38 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator