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Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells

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Lu, Hao Feng; Fu, Lan; Jolley, Greg; Rao Tatavarti, Sudersena; Jagadish, Chennupati; Tan, Hark Hoe

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Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature...[Show more]

dc.contributor.authorLu, Hao Feng
dc.contributor.authorFu, Lan
dc.contributor.authorJolley, Greg
dc.contributor.authorRao Tatavarti, Sudersena
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.coverage.spatialCanberra Australia
dc.date.accessioned2015-12-10T22:21:41Z
dc.date.createdDecember 12-15 2010
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/52317
dc.description.abstractPerformances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)
dc.source2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.source.urihttp://commad2010.anu.edu.au/
dc.subjectKeywords: Carrier trapping; Current properties; GaAs; Quantum dot solar cells; Quantum dots; Rapid changes; Reference devices; Temperature dependence; Dark currents; Gallium alloys; Gallium arsenide; Microelectronics; Semiconducting gallium; Semiconductor quantum d
dc.titleTemperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationU3488905xPUB244
local.type.statusPublished Version
local.contributor.affiliationLu, Hao Feng, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJolley, Greg, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRao Tatavarti, Sudersena, MicroLink Devices
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage127
local.bibliographicCitation.lastpage128
local.identifier.doi10.1109/COMMAD.2010.5699695
dc.date.updated2016-02-24T10:01:27Z
local.identifier.scopusID2-s2.0-79951744863
CollectionsANU Research Publications

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