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Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

Yuan, Cao; Lei, Wen


SiO2 nanocrystals embedded in Lu2O3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO2 nanocrystals certainly experienced great compressive stress in Lu2O3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO2 nanocrystals embedded in Lu2O3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2009.11.087


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