Nanowires for optoelectronic device applications
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III...[Show more]
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi (C) Current Topics in Solid State Physics|
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