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Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates

Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Jagadish, Chennupati; Kim, Yong; Guo, YaNan; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hark Hoe

Description

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the

dc.contributor.authorKang, Jung-Hyun
dc.contributor.authorGao, Qiang
dc.contributor.authorJoyce, Hannah J
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorKim, Yong
dc.contributor.authorGuo, YaNan
dc.contributor.authorXu, Hongyi
dc.contributor.authorZou, Jin
dc.contributor.authorFickenscher, M A
dc.contributor.authorSmith, Leigh M
dc.contributor.authorJackson, Howard E
dc.contributor.authorYarrison-Rice, Jan M
dc.contributor.authorTan, Hark Hoe
dc.coverage.spatialSeoul South Korea
dc.date.accessioned2015-12-10T22:20:32Z
dc.date.createdAugust 17-20 2010
dc.identifier.isbn9781424470310
dc.identifier.urihttp://hdl.handle.net/1885/51970
dc.description.abstractWe investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesIEEE Conference on Nanotechnology (IEEE-NANO 2010)
dc.sourceNanotechnology (IEEE-NANO), 2010 10th IEEE Conference Proceedings
dc.source.urihttp://ieeenano2010.org/
dc.subjectKeywords: AU catalysts; Defect-free; Defect-free growth; GaAs; In-situ; Metalorganic chemical vapor deposition; MOCVD; Post annealing; Si substrates; Si(111) substrate; Structural defect; Systematic experiment; Two-temperature; V/III ratio; Vapor-liquid-solid growt Defect-free; Epitaxial growth; GaAs; MOCVD; Nanowire; Si substrate
dc.titleImprovement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationU3488905xPUB236
local.identifier.ariespublicationU3488905xPUB2949
local.type.statusPublished Version
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, Dong-A University
local.contributor.affiliationGuo, YaNan, University of Queensland
local.contributor.affiliationXu, Hongyi, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationFickenscher, M A, University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.description.embargo2037-12-31
local.bibliographicCitation.startpage470
local.bibliographicCitation.lastpage473
local.identifier.doi10.1109/NANO.2010.5697783
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T10:01:23Z
local.identifier.scopusID2-s2.0-79951831053
CollectionsANU Research Publications

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