Skip navigation
Skip navigation

Improvement of Morphology, Structure, and Optical Properties of GaAs Nanowires Grown on Si substrates

Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Jagadish, Chennupati; Kim, Yong; Guo, YaNan; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hark Hoe


We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference Proceedings
DOI: 10.1109/NANO.2010.5697783


File Description SizeFormat Image
01_Kang_Improvement_of_Morphology,_2010.pdf274.64 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator