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Electrical properties of Si-XII and Si-III formed by nanoindentation

Wang, Yu; Ruffell, Simon; Stewart Sears, Kalista; Knights, Andrew P; Bradby, Jodie; Williams, James

Description

Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/51922
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699682

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