Skip navigation
Skip navigation

Electrical properties of Si-XII and Si-III formed by nanoindentation

Wang, Yu; Ruffell, Simon; Stewart Sears, Kalista; Knights, Andrew P; Bradby, Jodie; Williams, James


Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699682


File Description SizeFormat Image
01_Wang_Electrical_properties_of_2010.pdf395.83 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator