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Comparison between implanted boron and phosphorus in silicon wafers

Burgess, Jack; Johnson, Brett; Villis, Byron; McCallum, Jeffrey C; Charnvanichborikarn, Supakit; Wong-Leung, Yin-Yin (Jennifer); Williams, James

Description

The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/51874
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699752

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