Comparison between implanted boron and phosphorus in silicon wafers
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Burgess, Jack; Johnson, Brett; Villis, Byron; McCallum, Jeffrey C.; Charnvanichborikarn, Supakit; Wong-Leung, Jennifer; Williams, James
Description
The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/51874 |
Source: | 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings |
DOI: | 10.1109/COMMAD.2010.5699752 |
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