Comparison between implanted boron and phosphorus in silicon wafers
The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.
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|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Burgess_Comparison_between_implanted_2010.pdf||826.68 kB||Adobe PDF||Request a copy|