Skip navigation
Skip navigation

Resistance switching in polycrystalline NiOx thin film

Kim, Tae-Hyun; Nawaz (Saleh), Muhammad; Kim, Sung-I; Venkatachalam, Dinesh; Belay, Kidane; Burgess, Andrew; Strumpp, Stephan; Elliman, Robert


Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699751


File Description SizeFormat Image
01_Kim_Resistance_switching_in_2010.pdf345.73 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator