Resistance switching in polycrystalline NiOx thin film
Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.
|Collections||ANU Research Publications|
|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Kim_Resistance_switching_in_2010.pdf||345.73 kB||Adobe PDF||Request a copy|
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