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Bistable Resistive Switching in Hafnium-Silicate Thin Films

Nawaz (Saleh), Muhammad; Venkatachalam, Dinesh; Belay, Kidane; Kim, Tae-Hyun; Elliman, Robert

Description

We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/51566
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699730

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