Bistable Resistive Switching in Hafnium-Silicate Thin Films
We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (HfxSi1-xO2) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the
|Collections||ANU Research Publications|
|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Nawaz (Saleh)_Bistable_Resistive_Switching_2010.pdf||879.82 kB||Adobe PDF||Request a copy|
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