Effect of n- and p-type dopants on patterned amorphous regrowth
Solid-phase epitaxial regrowth for patterned amorphous regions has been known to form device degrading mask-edge defects. Prior studies have shown that orientation dependence of regrowth leads to pinching of the slow regrowing corners (111 fronts) that create these defects [K. L. Saenger, J. Appl. Phys. 101, 104908 (2007)]. Also, the effect of n -type and p -type dopants on regrowth is known only for 001 bulk [B. C. Johnson and J. C. McCallum, Phys. Res. B 76, 045216 (2007); J. S. Williams and...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science and Technology B|
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