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Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films

Elliman, Robert; Nawaz (Saleh), Muhammad; Kim, Sung-I; Venkatachalam, Dinesh; Kim, Tae-Hyun; Belay, Kidane

Description

The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the...[Show more]

dc.contributor.authorElliman, Robert
dc.contributor.authorNawaz (Saleh), Muhammad
dc.contributor.authorKim, Sung-I
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorKim, Tae-Hyun
dc.contributor.authorBelay, Kidane
dc.coverage.spatialSan Francisco USA
dc.date.accessioned2015-12-10T22:16:47Z
dc.date.available2015-12-10T22:16:47Z
dc.date.createdApril 5-9 2010
dc.identifier.isbn1946-4274
dc.identifier.urihttp://hdl.handle.net/1885/51108
dc.description.abstractThe forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.
dc.publisherCambridge Journals
dc.relation.ispartofseriesMaterials Research Society Meeting Spring 2010
dc.sourceMaterials Research Society Symposium Proceedings
dc.source.urihttp://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7956013&fulltextType=RA&fileId=S1946427400002542
dc.subjectKeywords: Fluences; Ion fluences; NiO thin film; Production rates; Resistive switching; Switching response; Thermochemical models; Thin films; Ions
dc.titleEffect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationU3488905xPUB217
local.type.statusPublished Version
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationNawaz (Saleh), Muhammad, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Sung-I, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Tae-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBelay, Kidane, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage6
local.identifier.doi10.1557/PROC-1250-G05-06
dc.date.updated2016-02-24T10:00:54Z
local.identifier.scopusID2-s2.0-78650324740
CollectionsANU Research Publications

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