Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films
The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the...[Show more]
|Collections||ANU Research Publications|
|Source:||Materials Research Society Symposium Proceedings|
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