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Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films

Elliman, Robert; Nawaz (Saleh), Muhammad; Kim, Sung-I; Venkatachalam, Dinesh; Kim, Tae-Hyun; Belay, Kidane

Description

The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/51108
Source: Materials Research Society Symposium Proceedings
DOI: 10.1557/PROC-1250-G05-06

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