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Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

Morarka, S; Rudawski, N G; Law, M E; Jones, K S; Elliman, Robert

Description

Modeling the two-dimensional (2D) solid-phase epitaxial regrowth (SPER) of amorphized Si (variously referred to as solid-phase epitaxial growth, solid-phase epitaxy, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) has become important in light of recent studies which have indicated that relative differences in the velocities of regrowth fronts with different crystallographic orientations can lead to the formation of device degrading mask edge defects. Here, a...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/50969
Source: Journal of Applied Physics
DOI: 10.1063/1.3082086

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