Modeling two-dimensional solid-phase epitaxial regrowth using level set methods
Modeling the two-dimensional (2D) solid-phase epitaxial regrowth (SPER) of amorphized Si (variously referred to as solid-phase epitaxial growth, solid-phase epitaxy, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) has become important in light of recent studies which have indicated that relative differences in the velocities of regrowth fronts with different crystallographic orientations can lead to the formation of device degrading mask edge defects. Here, a...[Show more]
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|Source:||Journal of Applied Physics|
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