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Nonvolatile-Memory Characteristics of AlO − -Implanted Al 2 O 3

Kim, Min Choul; Kim, Sung; Choi, Suk Ho; Belay, Kidane; Elliman, Robert; Russo, Salvy P


The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2009.2024440


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