Nonvolatile-Memory Characteristics of AlO − -Implanted Al 2 O 3
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Electron Device Letters|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.