Saturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen
Si nanocrystals embedded in silicon dioxide films are exposed to an atomic hydrogen plasma at different temperatures in the range from 100 °C to 350 °C. The photoluminescence (PL) from the nanocrystals is shown to increase in intensity with increasing e
|Collections||ANU Research Publications|
|Source:||Journal of the Korean Physical Society|
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