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Nanoindentation of ion-implanted crystalline germanium

Oliver, David; Ruffell, Simon; Bradby, Jodie; Williams, James; Swain, Michael Vincent; Munroe, Paul; Simpson, Peter J

Description

Most indentation studies to date on crystalline germanium (c-Ge) and related covalent semiconductors have been carried out on pristine defect-free material. This paper addresses the paucity of studies on imperfect crystalline materials by exploring the impact of defects generated by ion implantation, prior to contact damage, upon the mechanical properties of c-Ge. Implantation with Ge ions is carried out to generate a layer of highly defective but still-crystalline Ge. Under nanoindentation...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/50767
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.80.115210

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