Nanoindentation of ion-implanted crystalline germanium
Most indentation studies to date on crystalline germanium (c-Ge) and related covalent semiconductors have been carried out on pristine defect-free material. This paper addresses the paucity of studies on imperfect crystalline materials by exploring the impact of defects generated by ion implantation, prior to contact damage, upon the mechanical properties of c-Ge. Implantation with Ge ions is carried out to generate a layer of highly defective but still-crystalline Ge. Under nanoindentation...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
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