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Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores

Paladugu, Mohanchand; Zou, Jin; Guo, YaNan; Zhang, Xin; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Kim, Yong; Tan, Hark Hoe


GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: Nanoscale Research Letters
DOI: 10.1007/s11671-009-9326-6


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