Skip navigation
Skip navigation

The evolution of bond structure in Ge33As12Se55 films upon thermal annealing

Wang, Rongping; Choi, Duk-Yong; Rode, Andrei V; Luther-Davies, Barry

Description

The evolution of bond structure of laser deposited Ge33As12Se55 films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/50441
Source: Journal of Non-crystalline Solids
DOI: 10.1016/j.jnoncrysol.2008.06.111

Download

File Description SizeFormat Image
01_Wang_The_evolution_of_bond_2008.pdf201.81 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator