Plasma etching of As2S3 films for optical waveguides
Chalcogenide glasses are good candidate materials for ultra-fast non-linear optic devices. In this work, we present the photolithographic process and the plasma etching of arsenic tri-sulphide (As2S3) film. The films were deposited on thermally oxidized silicon substrates by ultra-fast pulsed laser deposition. To protect As2S3 film from photo-resist developer, thin resist layer ∼100-200 nm was remained on the UV exposed area by controlling resist development time. After removing the protective...[Show more]
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|Source:||Journal of Non-crystalline Solids|
|01_Choi_Plasma_etching_of_As2S3_films_2008.pdf||386.03 kB||Adobe PDF||Request a copy|
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