Wang, Rongping; Rode, Andrei V; Choi, Duk-Yong; Luther-Davies, Barry
Ge33As12Se33 films deposited by ultrafast pulse laser deposition were annealed at various temperatures and pressures, and the dependence of the surface oxidation on the processing conditions was investigated by X-ray photoelectron spectroscopy (XPS). We found that even as-grown film contains a thin oxidized surface and the oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thicknesses of the oxidized...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.