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Surface oxidation of Ge33As12Se55 Films

Wang, Rongping; Rode, Andrei V; Choi, Duk-Yong; Luther-Davies, Barry


Ge33As12Se33 films deposited by ultrafast pulse laser deposition were annealed at various temperatures and pressures, and the dependence of the surface oxidation on the processing conditions was investigated by X-ray photoelectron spectroscopy (XPS). We found that even as-grown film contains a thin oxidized surface and the oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thicknesses of the oxidized...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Journal of the American Ceramic Society
DOI: 10.1111/j.1551-2916.2008.02405.x


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