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Rapid ion-implantation-induced amorphization of InxGa1−xAs relative to InAs and GaAs

Hussain, Zohair; Wendler, E; Wesch, Werner; Foran, Garry J; Schnohr, Claudia; Llewellyn, David; Ridgway, Mark C

Description

We report on the rapid implantation-induced amorphization of the ternary Inx Ga1-x As alloys. Unlike Alx Ga1-x As, Inx Ga1-x As did not exhibit amorphization kinetics intermediate between the two binary-alloy extremes. Instead, our investigation of the crystalline-to-amorphous phase transformation over the entire stoichiometry (x) range demonstrated that Inx Ga1-x As alloys with x=∼0.06-0.53 were rendered amorphous at fluences less than that required for both InAs and GaAs. Implantation-induced...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/49666
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.79.085202

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