In-situ electrical characterization of Si during nanoindentation
A novel in-situ electrical characterization technique is used to study the deformation behavior of silicon during nanoindentation. The method involved the formation of a Schottky contact on high resistivity epitaxial Si that is converted to an ohmic contact when Si transforms from the familiar semiconducting Si-I to a metallic Si-II phase. This behavior leads to substantial changes in the current measured across the sample. The Si conductivity used (epitaxial 5 Ωcm on 6 × 10-3 Ωcm) provides...[Show more]
|Collections||ANU Research Publications|
|Source:||2002 Fall Proceedings of the Materials Research Society|
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