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Ion-beam processes in group-III nitrides

Kucheyev, Sergei

Description

Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these devices, ion bombardment represents a very attractive technological tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this...[Show more]

CollectionsOpen Access Theses
Date published: 2002
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/47655
DOI: 10.25911/5d7a299a5f1d5

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