Surface, Emitter and Bulk Recombination in Silicon and Development of Silicon Nitride Passivated Solar Cells
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¶ Recombination within the bulk and at the surfaces of crystalline silicon has been investigated in this thesis. Special attention has been paid to the surface passivation achievable with plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN) films due to their potential for widespread use in silicon solar cells. The passivation obtained with thermally grown silicon oxide (SiO2) layers has also been extensively investigated for comparison. ¶ Injection-level dependent lifetime...[Show more]
dc.contributor.author | Kerr, Mark John | |
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dc.date.accessioned | 2008-09-15T02:21:49Z | |
dc.date.accessioned | 2011-01-04T02:39:06Z | |
dc.date.available | 2008-09-15T02:21:49Z | |
dc.date.available | 2011-01-04T02:39:06Z | |
dc.identifier.other | b21254035 | |
dc.identifier.uri | http://hdl.handle.net/1885/47459 | |
dc.description.abstract | ¶ Recombination within the bulk and at the surfaces of crystalline silicon has been investigated in this thesis. Special attention has been paid to the surface passivation achievable with plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN) films due to their potential for widespread use in silicon solar cells. The passivation obtained with thermally grown silicon oxide (SiO2) layers has also been extensively investigated for comparison. ¶ Injection-level dependent lifetime measurements have been used throughout this thesis to quantify the different recombination rates in silicon. New techniques for interpreting the effective lifetime in terms of device characteristics have been introduced, based on the physical concept of a net photogeneration rate. The converse relationships for determining the effective lifetime from measurements of the open-circuit voltage (Voc) under arbitrary illumination have also been introduced, thus establishing the equivalency of the photoconductance and voltage techniques, both quasi-static and transient, by allowing similar possibilities for all of them. ¶ ... | |
dc.language.iso | en | |
dc.rights.uri | The Australian National University | |
dc.subject | surface | |
dc.subject | emitter | |
dc.subject | bulk | |
dc.subject | recombination | |
dc.subject | silicon nitride passivated solar cells | |
dc.subject | passivation | |
dc.subject | SiN | |
dc.subject | crystalline silicon solar cells | |
dc.subject | silicon oxide | |
dc.subject | SiO2 | |
dc.title | Surface, Emitter and Bulk Recombination in Silicon and Development of Silicon Nitride Passivated Solar Cells | |
dc.type | Thesis (PhD) | |
dcterms.valid | 2002 | |
local.description.refereed | yes | |
local.type.degree | Doctor of Philosophy (PhD) | |
dc.date.issued | 2002 | |
local.contributor.affiliation | Faculty of Engineering and Information Technology, Department of Engineering | |
local.contributor.affiliation | The Australian National University | |
local.identifier.doi | 10.25911/5d7a29c09cd46 | |
local.mintdoi | mint | |
Collections | Open Access Theses |
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02whole.pdf | 2.64 MB | Adobe PDF |
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