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Influence of reactive ion etching on the minority carrier lifetime in P-type Si

Deenapanray, P. N. K; Athukorala, C. S; Macdonald, D; Everett, V; Weber, K. J; Blakers, Andrew

Description

Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the recombination properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time, before reaching a plateau. Evidence is provided for the long-range (> 2 µm) migration of defects in the samples plasma-etched at room temperature. The...[Show more]

CollectionsANU Research Publications
Type: Conference paper
URI: http://hdl.handle.net/1885/43098

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