Silicon / Silicon oxide / LPCVD Silicon nitride stacks: The effect of oxide thickness on bulk damage and surface passivation
Silicon / thermally grown silicon dioxide / LPCVD silicon nitride stacks were formed to investigate the influence of the oxide thickness on silicon bulk and surface properties after thermal processing. With no oxide, the LPCVD silicon nitride layer causes serious irreversible bulk damage to silicon wafers after a high temperature treatment. A thin oxide layer (~10nm) helps to substantially reduce the damage. A thick oxide (more than 50nm) can help completely eliminate the bulk damage. An...[Show more]
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