Formation and Characterisation of Amorphous Gallium Nitride
For this study, wurtzite GaN was epitaxially grown on a Al2O3 substrate. Four samples were implanted with 4.7MeV Au ions to doses below and above the amorphisation threshold. These are characterised relative to an un-implanted as-grown sample. The extent of amorphisation within the ion-implanted material is characterised by comparing the results of rigorous analysis using the complementary techniques of X-Ray Diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), Transmission...[Show more]
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