Formation and Characterization of Aluminium Contacts to n-type Silicon
Samples were prepared by performing phosphorus diffusions with POCl3 on Sb doped (100) silicon wafers. 99.9% (3N) purity Al or 99.999% (5N) purity Al dots of diameter 0.7 mm and thickness between 0.2 µm or 1.0 µm were then deposited onto quarters of these wafers. The quarters were then subsequently cleaved into 1 cm2 pieces which were annealed at temperatures ranging from 400?C to 650?C for durations of time between 10 minutes and 2 hours. The speed with which these samples were cooled was also...[Show more]
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