Quantum well intermixing by ion implantation
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Description
The work carried out in this study explored the phenomenon of ion implantation induced intermixing in quantum well structures. Two quantum well systems were investigated; the unstrained GaAs/Al_xGa_(1-x)As system, and the strained In_xGa_(1-x)As/GaAs system. Previous results from proton and arsenic implantation into these systems were verified, and new work on Boron implantation was conducted to test the medium mass ion regime.
Collections | Open Access Theses |
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Date published: | 2002 |
Type: | Thesis (Honours) |
URI: | http://hdl.handle.net/1885/41355 |
DOI: | 10.25911/5d7a28b23b256 |
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File | Description | Size | Format | Image |
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Barnett_honous_thesis.pdf | 1.74 MB | Adobe PDF |
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