Skip navigation
Skip navigation

Quantum well intermixing by ion implantation

Barnett, Anne


The work carried out in this study explored the phenomenon of ion implantation induced intermixing in quantum well structures. Two quantum well systems were investigated; the unstrained GaAs/Al_xGa_(1-x)As system, and the strained In_xGa_(1-x)As/GaAs system. Previous results from proton and arsenic implantation into these systems were verified, and new work on Boron implantation was conducted to test the medium mass ion regime.

CollectionsOpen Access Theses
Date published: 2002
Type: Thesis (Honours)
DOI: 10.25911/5d7a28b23b256


File Description SizeFormat Image
Barnett_honous_thesis.pdf1.74 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator