FORMATION AND CHARACTERISATION OF NANOCRYSTALLINE COPPER IN AMORPHOUS SILICA
Samples were prepared by high-energy implantation of Cu ions into a SiO_2 (5μm)/Si (substrate) matrix. Cu ions were implanted to a nominal dose of 1×10^16 - 3×10^17 /cm^2 at a sequential beam energy of 5000 - 800 keV and at a current density of ~5 μA/cm2. Implantation was carried out at LN2 temperature in a vacuum of < 10^-7 Torr. Nucleation and growth was induced by subsequential anneals in 5%H_2+95%N_2 (forming gas) for one hour at 500, 800, and 1100C. Determination of the nanocrystal...[Show more]
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