Electrical characterization impurity-disordering induced defects in n-GaAs using native oxide layers
Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (EV+0.44 eV), H2...[Show more]
|Collections||ANU Research Publications|
|2346-01.2004-01-07T01:10:57Z.xsh||352 B||EPrints MD5 Hash XML|
|APA4486.pdf||175.44 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.