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Electrical characterization impurity-disordering induced defects in n-GaAs using native oxide layers

Deenapanray, P.N.K; Tan, Hoe Hark; Jagadish, Chennupati


Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (EV+0.44 eV), H2...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article


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