Electrical characterization of impurity-free disordered p-type GaAs
Impurity-free disordered p-GaAs epi layers by SiO2 or native oxide capping are characterized using deep level transient spectroscopy (DLTS) and capacitance-voltage measurements. Samples, including an uncapped epi layer for reference, were annealed at 900°C for 30 s under Ar ambient. Disordering resulted in an increase in the free hole concentration with the effect being more pronounced for the SiO2 capping layer. DLTS measurements revealed the corresponding increase in the concentrations of...[Show more]
|Collections||ANU Research Publications|
|Source:||Electrochemical and Solid-State Letters|
|2344-01.2004-01-06T03:37:06Z.xsh||353 B||EPrints MD5 Hash XML|
|anopgaas.pdf||72.53 kB||Adobe PDF|
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