Validity of Shockley-Read-Hall statistics for modeling carrier lifetimes in silicon
The Shockley-Read-Hall model, in its simplest and most common form, is often used to describe both injection- and temperature-dependent carrier lifetime measurements. Such lifetime modeling has provided the basis for novel, ultra-sensitive spectroscopic techniques for the study of recombination centers in crystalline silicon. However, this approximate model is only valid when the density of recombination centres is small enough to avoid trapping effects, which cause distortions in the excess...[Show more]
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