Validity of Shockley-Read-Hall statistics for modeling carrier lifetimes in silicon
Description
The Shockley-Read-Hall model, in its simplest and most common form, is often used to describe both injection- and temperature-dependent carrier lifetime measurements. Such lifetime modeling has provided the basis for novel, ultra-sensitive spectroscopic techniques for the study of recombination centers in crystalline silicon. However, this approximate model is only valid when the density of recombination centres is small enough to avoid trapping effects, which cause distortions in the excess...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2003 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/40881 http://digitalcollections.anu.edu.au/handle/1885/40881 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
SRH-PRB-two-col.pdf | 232.27 kB | Adobe PDF | ![]() |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator