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Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon

Macdonald, D; Cuevas, Andres; Rein, S; Lichtner, P; Glunz, S.W

Description

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to the data from p-type samples gives an accurate characterisation of these recombination centres in the form of two independent levels – one shallow centre near the conduction band, and one deep centre. These two levels provide a useful approximation to the distributed defect band that is known to...[Show more]

dc.contributor.authorMacdonald, D
dc.contributor.authorCuevas, Andres
dc.contributor.authorRein, S
dc.contributor.authorLichtner, P
dc.contributor.authorGlunz, S.W
dc.coverage.spatialOsaka, Japan
dc.coverage.temporal2003
dc.date.accessioned2004-01-23
dc.date.accessioned2004-05-19T13:04:08Z
dc.date.accessioned2011-01-05T08:44:05Z
dc.date.available2004-05-19T13:04:08Z
dc.date.available2011-01-05T08:44:05Z
dc.date.created2003
dc.identifier.isbn4990181603
dc.identifier.urihttp://hdl.handle.net/1885/40879
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40879
dc.description.abstractTemperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to the data from p-type samples gives an accurate characterisation of these recombination centres in the form of two independent levels – one shallow centre near the conduction band, and one deep centre. These two levels provide a useful approximation to the distributed defect band that is known to exist in the upper band half by previous DLTS studies. In n-type silicon the situation is complicated by the Fermi-level shifting through the defect energy band with increasing temperature, altering the charge state of the precipitates, and therefore imparting a strong temperature dependence to the capture cross sections.
dc.format.extent545455 bytes
dc.format.extent363 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/octet-stream
dc.language.isoen_AU
dc.publisherConference Organising Committee
dc.relation.ispartofseriesIn Proceedings 3rd World Conference of Photovoltaic Solar Energy Conversion
dc.sourceWCPEC-3: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion
dc.subjecttemperature
dc.subjectinjection-dependent
dc.subjectmeasurements
dc.subjectsilicon wafers
dc.subjectcopper
dc.subjectShockley-Read-Hall model
dc.subjectcrystalline silicon
dc.titleTemperature and injection-dependent lifetime spectroscopy of copper-related defects silicon
dc.typeConference paper
local.description.refereedyes
local.identifier.citationyear2003
local.identifier.eprintid2339
local.rights.ispublishedyes
dc.date.issued2003
local.identifier.absfor030606 - Structural Chemistry and Spectroscopy
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub16055
local.type.statusPublished Version
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationRein, Stefan, Fraunhofer Institute
local.contributor.affiliationLichtner, P, Fraunhofer Institute
local.contributor.affiliationGlunz, Stefan , Fraunhofer Institute
local.bibliographicCitation.startpage1PC3-05_1-4
dc.date.updated2015-12-12T08:18:58Z
local.identifier.scopusID2-s2.0-6344231751
CollectionsANU Research Publications

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