Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to the data from p-type samples gives an accurate characterisation of these recombination centres in the form of two independent levels – one shallow centre near the conduction band, and one deep centre. These two levels provide a useful approximation to the distributed defect band that is known to...[Show more]
|Collections||ANU Research Publications|
|Source:||WCPEC-3: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion|
|Macdonald-1P-C3-05.pdf||532.67 kB||Adobe PDF|
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