Getting and poisoning of silicon wafers by phosphorus diffused layers
Macdonald, D; Cheung, A; Cuevas, Andres
Description
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gettering layer during subsequent annealing, has been studied through the use of float-zone samples deliberately contaminated with iron. Lifetime measurements reveal that phosphorus gettering, in this case at 880°C, initially removes more than 99% of the iron from the wafer bulk, to levels below 1×1011cm-3. However, upon further annealing at temperatures greater than the gettering temperature, some...[Show more]
Collections | ANU Research Publications |
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Date published: | 2003 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/40878 http://digitalcollections.anu.edu.au/handle/1885/40878 |
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File | Description | Size | Format | Image |
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Osaka-Fe-paper-with-header.pdf | 405.56 kB | Adobe PDF | ![]() |
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