Getting and poisoning of silicon wafers by phosphorus diffused layers
The effectiveness of phosphorus gettering, and the possible re-injection of impurities from the gettering layer during subsequent annealing, has been studied through the use of float-zone samples deliberately contaminated with iron. Lifetime measurements reveal that phosphorus gettering, in this case at 880°C, initially removes more than 99% of the iron from the wafer bulk, to levels below 1×1011cm-3. However, upon further annealing at temperatures greater than the gettering temperature, some...[Show more]
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