Characterisation of silicon epitaxial layers for solar cell applications
The growth and detachment of epitaxial layers of semiconductor material on a suitable substrate, with subsequent re-use of the substrate, is of interest due to its potential for significant reductions in the cost of the epitaxial material, and therefore in the cost of solar cells fabricated on epitaxial layers. Recently the epilift technique was introduced which allows the fabrication of single crystalline layers of silicon of arbitrary size and shape by liquid phase epitaxy (LPE) on single...[Show more]
|Collections||ANU Research Publications|
|1900-01.2003-08-22T05:20:14Z.xsh||353 B||EPrints MD5 Hash XML|
|vienna98.pdf||143.37 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.